? 2005 ixys all rights reserved g = gate d = drain s = source tab = drain ds99250e(12/05) polarhv tm power mosfet v dss = 600 v i d25 =22 a r ds (on) 350 m ? ? ? ? ? n-channel enhancement mode avalanche rated features l international standard packages l unclamped inductive switching (uis) rated l low package inductance - easy to drive and to protect advantages l easy to mount l space savings l high power density to-3p (ixtq) g d s (tab) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0 v, i d = 250 a 600 v v gs(th) v ds = v gs , i d = 250 a 3.0 5.5 v i gss v gs = 30 v dc , v ds = 0 100 na i dss v ds = v dss 25 a v gs = 0 v t j = 125 c 250 a r ds(on) v gs = 10 v, i d = 0.5 i d25 350 m ? pulse test, t 300 s, duty cycle d 2 % symbol test conditions maximum ratings v dss t j = 25 c to 150 c 600 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 600 v v gs continuous 30 v v gsm tranisent 40 v i d25 t c = 25 c22a i dm t c = 25 c, pulse width limited by t jm 66 a i ar t c = 25 c22a e ar t c = 25 c40mj e as t c = 25 c 1.0 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 10 v/ns t j 150 c, r g = 4 ? p d t c = 25 c 400 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c t sold plastic body for 10 s 260 c m d mounting torque (to-3p) 1.13/10 nm/lb.in. f c mounting force (plus 220) 11...65/2.5...15 n/lb weight to-3p 6 g plus220 & plus220smd 5.0 g g s plus220smd (ixtv_s) g s d plus220 (ixtv) d (tab) d (tab) ixtq 22n60p ixtv 22n60p ixtv 22n60ps
ixys reserves the right to change limits, test conditions, and dimensions. ixtq 22n60p ixtv 22n60p ixtv 22n60ps symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 20 v; i d = 0.5 i d25 , pulse test 15 21 s c iss 3600 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 305 pf c rss 38 pf t d(on) 20 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = i d25 20 ns t d(off) r g = 4 ? (external) 60 ns t f 23 ns q g(on) 62 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 20 nc q gd 25 nc r thjc 0.31 c/w r thcs (to-3p) 0.21 c/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 22 a i sm repetitive 66 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr i f = 22a, -di/dt = 100 a/ s 500 ns q rm v r = 100v, v gs = 0 v 4.0 c to-3p (ixtq) outline plus220 (ixtv) outline ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 plus220smd (ixtv_s) outline
? 2005 ixys all rights reserved fig. 2. extended output characteristics @ 25 o c 0 5 10 15 20 25 30 35 40 45 0 3 6 9 12 15 18 21 24 27 30 v d s - volts i d - amperes v gs = 10v 9v 8v 6v 7.5v 7v 6.5v fig. 3. output characteristics @ 125 o c 0 2 4 6 8 10 12 14 16 18 20 22 0 2 4 6 8 101214161820 v d s - volts i d - amperes v gs = 10v 8v 7v 5.5v 5v 6v 6.5v fig. 1. output characteristics @ 25 o c 0 2 4 6 8 10 12 14 16 18 20 22 0123456789 v d s - volts i d - amperes v gs = 10v 8v 7v 6v 7.5v fig. 4. r ds(on ) norm alized to 0.5 i d25 value vs. junction temperature 0.4 0.7 1 1.3 1.6 1.9 2.2 2.5 2.8 3.1 3.4 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r d s ( o n ) - normalized i d = 22a i d = 11a v gs = 10v fig. 6. drain current vs. case temperature 0 4 8 12 16 20 24 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes fig. 5. r ds(on) no r m aliz e d t o 0.5 i d25 value vs. i d 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 0 5 10 15 20 25 30 35 40 45 i d - amperes r d s ( o n ) - normalize d t j = 125 o c t j = 25 o c v gs = 10v ixtq 22n60p ixtv 22n60p ixtv 22n60ps
ixys reserves the right to change limits, test conditions, and dimensions. ixtq 22n60p ixtv 22n60p ixtv 22n60ps fig. 11. capacitance 10 100 1000 10000 0 5 10 15 20 25 30 35 40 v d s - volts capacitance - picofarads c iss c oss c rss f = 1mhz fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 1020 30405060 q g - nanocoulombs v g s - volts v ds = 300v i d = 11a i g = 10m a fig. 7. input adm ittance 0 3 6 9 12 15 18 21 24 27 30 4.5 5 5.5 6 6.5 7 7.5 8 v g s - volts i d - amperes t j = 125 o c 25 o c -40 o c fig. 8. transconductance 0 3 6 9 12 15 18 21 24 27 30 0 3 6 9 12 15 18 21 24 27 30 i d - amperes g f s - siemens t j = -40 o c 25 o c 125 o c fig. 9. source curre nt vs . source-to-drain voltage 0 10 20 30 40 50 60 70 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 v s d - volts i s - amperes t j = 125 o c t j = 25 o c fig. 12. for w ar d-bias safe operating area 1 10 100 10 100 1000 v d s - volts i d - amperes 100s 1ms dc t j = 150oc t c = 25oc r ds(on) limit 10ms 25s
? 2005 ixys all rights reserved fig. 13. maxim um transient therm al resistance 0.01 0.10 1.00 0.1 1 10 100 1000 pulse width - milliseconds r ( t h ) j c - o c / w ixtq 22n60p ixtv 22n60p ixtv 22n60ps
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